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參數(shù)資料
| 型號(hào)： | UPA1915TE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | UPA1915TE |
Data Sheet G14761EJ1V0DS00
3
μ
PA1915
TYPICAL CHARACTERISTICS (T
A
= 25°C)
30
T
A
- Ambient Temperature -
C
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
0
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
PW
=
100ms
PW
=
5s
PW
=
10
ms
PW
=
1
ms
DSon
=
R
GS
45
V
I
D
(pulse)
I
D
(
DC
)
Single Pulse
Mounted on 250 mm x 35
μ
m Copper Pad
Connected to Drain Electrode in
50 mm x 50 mm x 1.6 mm FR-4 Board
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.2
0.0
0.8
1.0
0.4
0.6
18
12
6
0
V
GS
=
4.5 V
2.5 V
4.0 V
2.7 V
0.01
0.001
0.0001
0.00001
0.5
0
1.0
1.5
2.0
2.5
3.0
100
10
1
0.1
75C
25C
T
A
= 125C
V
GS
- Gate to Sorce Voltage - V
25C
V
DS
=
10 V
TRANSFER CHARACTERISTICS
I
D
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
=
10 V
I
D
=
1 mA
T
ch
- Channel Temperature - C
V
G
50
50
100
0
150
1.5
1.0
0.5
1
10
100
0.1
V
DS
=
10V
I
D
- Drain Current - A
|
f
|
1
10
0.1
0.01
0.01
100
25
C
25
C
75
C
T
A
= 125
C
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
#
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1915TE-T2-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1916 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1916TE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917TE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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