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參數(shù)資料
| 型號： | UPA1914TE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 67K |
| 代理商： | UPA1914TE |
Data Sheet D13810EJ1V0DS00
4
μ
PA1914
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
40
T
A
= 125
C
T
A
= 75
C
T
A
=
25
C
T
A
= 25
C
60
100
80
120
V
GS
=
4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
40
T
A
= 125
C
T
A
= 75
C
T
A
=
25
C
T
A
= 25
C
60
80
100
V
GS
=
4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
30
T
A
= 125
C
T
A
= 75
C
T
A
=
25
C
T
A
= 25
C
40
60
50
70
V
GS
=
10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -C
I
D
=
2.5 A
50
0
50
100
150
20
60
40
100
80
R
D
-
V
GS
=
10 V
V
GS
=
4.0 V
V
GS
=
4.5 V
0
20
60
40
80
100
4
V
GS
- Gate to Source Voltage - V
8
16
20
12
R
D
-
I
D
=
2.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
10
0.1
100
1000
10000
1
10
100
f = 1
MHz
V
GS
= 0V
C
iss
C
rss
C
oss
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|---|---|
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| UPA1915TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1916 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1916TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1914TE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1914TE-T1-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 4.5A 6-Pin SC-95 T/R Cut Tape |
| UPA1915 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1915TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1915TE-T2-A | 制造商:Renesas Electronics Corporation 功能描述: |
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