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參數(shù)資料
| 型號： | UPA1914TE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 67K |
| 代理商： | UPA1914TE |
Data Sheet D13810EJ1V0DS00
3
μ
PA1914
TYPICAL CHARACTERISTICS (T
A
= 25°C)
30
T
A
- Ambient Temperature -
C
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
PW
=
100ms
PW
=
5s
PW
=
10
ms
PW
=
1
ms
DSon
=
R
GS
10V
I
D
(pulse)
I
D
(
DC
)
Single Pulse
Mounted on 250mm x 35
μ
m Copper Pad
Connected to Drain Electrode in
50mm x 50mm x 1.6mm FR-4 Board
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.2
0.0
0.8
1.0
0.4
0.6
4
0
12
16
8
20
V
GS
=
20 V
V
GS
=
10 V
V
GS
=
4.5 V
V
GS
=
4.0 V
0.01
0.001
0.0001
0.00001
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4
.0
100
10
1
0.1
T
A
= 25C
T
A
=
25C
T
A
= 75C
T
A
= 125C
V
GS
- Gate to Sorce Voltage - V
V
DS
=
10 V
TRANSFER CHARACTERISTICS
I
D
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
=
10 V
I
D
=
1 mA
T
ch
- Channel Temperature - C
V
G
50
50
100
0
150
2.0
1.5
1.0
1
10
100
0.1
V
DS
=
10V
T
A
=
25
C
T
A
= 25
C
I
D
- Drain Current - A
|
f
|
1
10
0.1
0.01
0.01
100
T
A
= 75
C
T
A
= 125
C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1914TE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1914TE-T1-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 4.5A 6-Pin SC-95 T/R Cut Tape |
| UPA1915 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1915TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1915TE-T2-A | 制造商:Renesas Electronics Corporation 功能描述: |
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