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參數(shù)資料
| 型號(hào)： | UPA1911TE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | UPA1911TE |
Data Sheet D13455EJ1V0DS00
5
μ
PA1911
0.1
1
10
I
D
- Drain Current - A
t
(
,
(
,
100
1000
10
td
(off)
td
(on)
tf
tr
SWITCHING CHARACTERISTICS
V
DD
=
10 V
V
GS
(
on
) =
4.0 V
R
G
= 10
10000
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
V
F(S-D)
- Source to Drain Voltage - V
Q
g
- Gate Charge - nC
0
1
3
5
7
8
4
6
2
DYNAMIC INPUT CHARACTERISTICS
V
G
-
0
4
2
6
8
10
V
DD
=
10 V
6.0 V
I
D
=
2.5 A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - S
r
t
10
0.1
1
100
1000
1
0.001
0.01
0.1
10
100
1000
Mounted on 250mm x 35
μ
m
Copper Pad
Connected to Drain Electrode
in 50mm x 50mm x 1.6mm
FR-4 Board Single Pulse
Without Board
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