參數(shù)資料
型號: UPA1911A
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場效應晶體管開關
文件頁數(shù): 3/8頁
文件大?。?/td> 382K
代理商: UPA1911A
Data Sheet G15044EJ1V0DS
3
μ
PA1911A
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
T
A
- Ambient Temperature -
°
C
100
80
60
40
20
0
0
30
60
90
120
150
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.01
0.1
1.0
10.0
100.0
I
D
Single Pulse
Mounted on 2500mm
x 35 m Copper Pad
Connected to Drain Electrode
in 50 mm
x 50 mm x 1.6 mm FR-4 Board
R
DS(on)
L =
(@V
GS
4.5V)
I
D(DC)
I
D(pulse)
1ms
10ms
DC
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
I
D
V
DS
- Drain to Source Voltage - V
10
8
6
4
2
0
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
=
4.5V
V
GS
=
4.0V
V
GS
=
2.5V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
°
C
V
G
-
50
0
50
100
150
1.5
1.0
0.5
V
=
10 V
I
D
=
1 mA
100.00
10.00
1.00
0.10
0.01
|
f
|
0.01
0.10
1.00
10.00
100.00
I
D
- Drain Current - A
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T
A
=
25
°
C
T
A
=
+
75
°
C
T
A
=
+
25
°
C
V
DS
=
10 V
T
A
=
+
125
°
C
V
GS
- Gate to Sorce Voltage - V
100
10
1
0.1
0.01
0.001
0.0001
0.00001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
FORWARD TRANSFER CHARACTERISTICS
I
D
T
A
=
25
°
C
T
A
=
+
25
°
C
V
DS
=
10 V
T
A
=
+
75
°
C
T
A
=
+
125
°
C
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