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參數(shù)資料
| 型號(hào)： | UPA1911A |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 382K |
| 代理商： | UPA1911A |
Data Sheet G15044EJ1V0DS
2
μ
PA1911A
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –20
V, V
GS
= 0
V
–10
#
10
–1.5
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±12
V, V
DS
= 0
V
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= –10
V, I
D
= –1
mA
–0.5
–1.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= –10
V, I
D
= –1.5
A
1
5.4
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= –4.5
V, I
D
= –1.5
A
82
115
m
R
DS(on)2
V
GS
= –4.0
V, I
D
= –1.5
A
86
120
m
R
DS(on)3
V
GS
= –2.5
V, I
D
= –1.0
A
122
190
m
Input Capacitance
C
iss
V
DS
= –10
V
370
pF
Output Capacitance
C
oss
V
GS
= 0
V
110
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
40
pF
Turn-on Delay Time
t
d(on)
V
DD
= –10
V, I
D
= –1.5
A
130
ns
Rise Time
t
r
V
GS
= –4.0
V
230
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
470
ns
Fall Time
t
f
380
ns
Total Gate Charge
Q
G
V
DD
= –10
V
2.3
nC
Gate to Source Charge
Q
GS
I
D
= –2.5
A
1.0
nC
Gate to Drain Charge
Q
GD
V
GS
= –4.0
V
1.0
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 2.5
A, V
GS
= 0
V
0.84
V
Reverse Recovery Time
t
rr
I
F
= 2.5
A, V
GS
= 0
V
14
ns
Reverse Recovery Charge
Q
rr
di/dt = 10
A
/
μ
s
1.4
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS(on)
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1911ATE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1911ATE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911ATE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1911TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1912 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1912TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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