參數(shù)資料
型號: UPA1910TE
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 5/8頁
文件大?。?/td> 66K
代理商: UPA1910TE
Data Sheet D13105EJ2V0DS00
5
μ
PA1910
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
150
V
GS
- Gate to Source Voltage - V
R
D
5
10
15
20
100
50
0
I
D
=
1.5 A
0.1
1.0
1000
100
10
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
i
,
o
,
r
V
DS
- Drain to Source Voltage - V
C
oss
C
iss
C
rss
f = 1
MHz
V
GS
= 0
V
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
10
0.1
1
10
100
1000
10000
V
DD
=
10
V
V
GS(on)
=
4
.
0
V
R
G
t
d(on)
t
d(off)
t
f
t
r
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
F(S-D)
- Source to Drain Voltage - V
I
F
0.4
0.2
0.6
0.8
1.0
1.2
100
10
1
0.1
0.01
0.001
0.0001
V
GS
= 0 V
DYNAMIC INPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
G
1
2
3
4
5
6
7
6
5
4
3
2
1
0
I
D
=
3.0
A
V
DD
=
10
V
6
V
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