參數(shù)資料
型號: UPA1910TE
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 4/8頁
文件大小: 66K
代理商: UPA1910TE
Data Sheet D13105EJ2V0DS00
4
μ
PA1910
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
0.01
0.1
1
10
100
90
70
50
30
V
GS
=
4.5
V
T
A
=125
°
C
75
°
C
25
°
C
25
°
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
0.01
0.1
1
10
100
90
70
50
30
V
GS
=
4.0
V
T
A
=125
°
C
75
°
C
25
°
C
25
°
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
0.01
0.1
1
10
100
120
100
80
60
V
GS
=
3.0
V
T
A
=125
°
C
75
°
C
25
°
C
25
°
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
0.01
0.1
1
10
100
180
160
140
120
100
80
60
V
GS
=
2.5 V
T
A
=125
°
C
75
°
C
25
°
C
25
°
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
T
ch
- Channel Temperature -
°
C
R
D
I
D
=
1.5
A
50
0
50
100
150
80
60
40
V
GS
=
4.0
V
4.5
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
T
ch
- Channel Temperature -
°
C
R
D
I
D
=
1.0
A
50
0
50
100
150
100
80
60
V
GS
=
2.5
V
3.0
V
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參數(shù)描述
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UPA1911TE 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING