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參數(shù)資料
| 型號(hào)： | UPA1901TE |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 68K |
| 代理商： | UPA1901TE |
Data Sheet G15804EJ1V0DS
4
μ
PA1901
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
Pulsed
2.5 V
V
GS
= 4.5 V
4.0 V
I
D
0.0001
0.001
0.01
0.1
1
10
100
0
0.5
1
1.5
2
2.5
3
Pulsed
V
DS
= 10 V
T
A
= 125°C
75°C
25°C
25°C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0.4
0.9
1.4
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1.0 mA
|
f
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulsed
V
DS
= 10 V
T
A
= 125°C
75°C
25°C
25°C
T
ch
- Channel Temperature -
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0
20
40
60
80
100
0.01
0.1
1
10
100
V
GS
= 4.5 V
Pulsed
T
A
= 125
°
C
75
°
C
25
°
C
25
°
C
0
20
40
60
80
100
0.01
0.1
1
10
100
V
GS
= 4.0 V
Pulsed
T
A
= 125
°
C
75
°
C
25
°
C
25
°
C
R
D
I
D
- Drain Current - A
R
D
I
D
- Drain Current - A
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| UPA1902 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1902TE | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1910 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1901TE-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1901TE-T1-AT | 制造商:Renesas Electronics 功能描述:Tape & Reel 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 6.5A 6-Pin Thin-Type Mini-Mold T/R |
| UPA1901TE-T2-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1902 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1902TE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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