參數(shù)資料
型號: UPA1852GR-9JG
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: N溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 3/8頁
文件大?。?/td> 64K
代理商: UPA1852GR-9JG
Data Sheet D12803EJ1V0DS00
3
μ
PA1852
TYPICAL CHARACTERISTICS (T
A
= 25°C)
30
T
A
- Ambient Temperature -
C
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
FORWARD BIAS SAFE OPERATING AREA
10.0
100.0
I
D
1.0
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
P
D
(FET1) : P
D
(FET2) = 1:1
I
D
(pulse)
I
D
(
DC
)
R
DSon
=
(@V
GS
45
V
100ms
DC
10
ms
PW
=
1
ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.2
0
0.8
1
0.4
0.6
5
0
15
10
20
25
V
GS
= 4.5 V
4.0 V
2.5 V
10
1
0.1
0.01
0.001
0
1
2
3
4
100
V
GS
- Gate to Source Voltage - V
V
DS
= 10 V
TRANSFER CHARACTERISTICS
I
D
T
A
= 125 C
75 C
25 C
25
C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
= 10 V
I
D
= 1 mA
50
50
100
0
150
1.5
1
0
0.5
1
10
100
0.1
V
DS
= 10 V
T
A
=
25
C
25
C
75
C
125
C
I
D
- Drain Current - A
|
f
|
1
10
0.1
100
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
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