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參數(shù)資料
| 型號： | UPA1872B |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 165K |
| 代理商： | UPA1872B |
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confirm that this is the latest version.
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MOS FIELD EFFECT TRANSISTOR
μ
PA1872B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16742EJ1V0DS00 (1st edition)
Date Published April 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The
μ
PA1872B is a switching device, which can be driven
directly by a 2.5 V power source.
The
μ
PA1872B features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 13.0 m
MAX. (V
GS
= 4.5 V, I
D
= 5.0 A)
R
DS(on)2
= 13.5 m
MAX. (V
GS
= 4.0 V, I
D
= 5.0 A)
R
DS(on)3
= 15.5 m
MAX. (V
GS
= 3.1 V, I
D
= 5.0 A)
R
DS(on)4
= 18.0 m
MAX. (V
GS
= 2.5 V, I
D
= 5.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1872BGR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20.0
V
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note 1
Drain Current (pulse)
Note 2
Total Power Dissipation
Note 1
V
GSS
±12.0
V
I
D(DC)
±10.0
A
I
D(pulse)
±80.0
A
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Notes 1.
Mounted on ceramic board of 50 cm
2
x 1.1
mm
2.
PW
≤
10
μ
s, Duty Cycle
≤
1%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
T
stg
–55 to +150
°C
PACKAGE DRAWING (Unit: mm)
5
1
4
8
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0
±
0.1
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
0.25
0.5
0.6
+0.15
3
°
+5
°
–3
°
1.2 MAX.
1.0±0.05
0.1±0.05
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
EQUIVALENT CIRCUIT
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1874B | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1874BGR-9JG | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1900 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1900TE | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1901 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1872BGR-9JG | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1872GR-9JG | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | COMMON DRAIN | N-CHANNEL | 20V V(BR)DSS | 10A I(D) | TSSOP |
| UPA1873 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1873GR-9JG | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1874 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA1874 Data Sheet | Data Sheet[12/2001] |
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