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參數(shù)資料
| 型號(hào)： | UPA1809 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | UPA1809 |
Data Sheet G16273EJ1V0DS
5
μ
PA1809
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
10
20
30
40
50
0.01
0.1
I
D
- Drain Current - A
1
10
100
Pulsed
4.5 V
10 V
V
GS
= 4.0 V
10
100
1000
0.1
1
10
100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
D
C
,
,
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
t
d
,
r
,
d
,
f
1
10
100
1000
10000
0.01
0.1
1
10
100
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
F
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
Pulsed
V
GS
= 0 V
I
D
- Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
G
0
2
4
6
8
10
0
2
4
6
8
10
12
I
D
= 8.0 A
V
DD
= 6.0 V
15 V
24 V
Q
G
- Gate Charge - nC
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| UPA1809GR-9JG | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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