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參數(shù)資料
| 型號： | UPA1809 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 64K |
| 代理商： | UPA1809 |
Data Sheet G16273EJ1V0DS
2
μ
PA1809
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±18
V, V
DS
= 0
V
±10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1.0 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 4.0
A
4.0
8.4
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 4.0
A
17
21
m
R
DS(on)2
V
GS
= 4.5
V, I
D
= 4.0
A
21.5
29
m
R
DS(on)3
V
GS
= 4.0
V, I
D
= 4.0
A
24
32
m
Input Capacitance
C
iss
V
DS
= 10
V
520
pF
Output Capacitance
C
oss
V
GS
= 0
V
200
pF
Reverse Transfer Capacitance
C
rss
f = 1.0
MHz
70
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15
V, I
D
= 4.0
A
11.5
ns
Rise Time
t
r
V
GS
= 10
V
6.0
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
32.5
ns
Fall Time
t
f
6.1
ns
Total Gate Charge
Q
G
V
DD
= 24 V
10
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
1.6
nC
Gate to Drain Charge
Q
GD
I
D
= 8.0
A
2.6
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 8.0
A, V
GS
= 0
V
0.85
V
Reverse Recovery Time
t
rr
I
F
= 8.0
A, V
GS
= 0
V
24
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A
/
μ
s
15
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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