參數(shù)資料
型號: UPA1792G
廠商: NEC Corp.
英文描述: SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開關N溝道和P溝道功率場效應晶體管工業(yè)用
文件頁數(shù): 1/12頁
文件大?。?/td> 104K
代理商: UPA1792G
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confirm that this is the latest version.
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availability and additional information.
1999, 2000
MOS FIELD EFFECT TRANSISTOR
μ
PA1792
SWITCHING
N- AND P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
G14557EJ1V0DS00 (1st edition)
July 2000 NS CP(K)
DESCRIPTION
The
μ
PA1792 is N- and P-Channel MOS Field Effect Transistors
designed for Motor Drive application of HDD and so on.
FEATURES
Low on-resistance
N-Channel R
DS(on)1
= 26 m
MAX. (V
GS
= 10 V, I
D
= 3.4 A)
R
DS(on)2
= 36 m
MAX. (V
GS
= 4.5 V, I
D
= 3.4 A)
R
DS(on)3
= 42 m
MAX. (V
GS
= 4.0 V, I
D
= 3.4 A)
P-Channel
R
DS(on)1
= 36 m
MAX. (V
GS
= –10 V, I
D
= –2.9 A)
R
DS(on)2
= 54 m
MAX. (V
GS
= –4.5 V, I
D
= –2.9 A)
R
DS(on)3
= 65 m
MAX. (V
GS
= –4.0 V, I
D
= –2.9 A)
Low input capacitance
N-Channel C
iss
= 760 pF TYP.
P-Channel C
iss
= 900 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1792G
Power SOP8
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
5.37 MAX.
0.10
1
4
8
5
N-Channel
1
2
7,8 ; Drain 1
; Source 1
; Gate 1
P-Channel
3
4
5,6 ; Drain 2
; Source 2
; Gate 2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
P-Channel
N-Channel
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