參數(shù)資料
型號(hào): UPA1792
廠商: NEC Corp.
英文描述: SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開(kāi)關(guān)N溝道和P溝道功率場(chǎng)效應(yīng)晶體管工業(yè)用
文件頁(yè)數(shù): 3/12頁(yè)
文件大小: 104K
代理商: UPA1792
Data Sheet G14557EJ1V0DS00
3
μ
PA1792
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
N-CHANNEL
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 3.4 A
20.5
26
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 3.4 A
27
36
m
R
DS(on)3
V
GS
= 4.0 V, I
D
= 3.4 A
31
42
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.1
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
=3.4 A
3.0
7.5
S
Drain Leakage Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16 V, V
DS
= 0 V
±
10
μ
A
Input Capacitance
C
iss
V
DS
= 10 V
760
pF
Output Capacitance
C
oss
V
GS
= 0 V
250
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
95
pF
Turn-on Delay Time
t
d(on)
I
D
= 3.4 A
20
ns
Rise Time
t
r
V
GS(on)
= 10 V
140
ns
Turn-off Delay Time
t
d(off)
V
DD
= 15 V
50
ns
Fall Time
t
f
R
G
= 10
30
ns
Total Gate Charge
Q
G
I
D
= 6.8 A
14
nC
Gate to Source Charge
Q
GS
V
DD
= 24 V
2
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 6.8 A, V
GS
= 0 V
0.86
V
Reverse Recovery Time
t
rr
I
F
= 6.8 A, V
GS
= 0 V
30
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A
/
μ
s
20
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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