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參數(shù)資料
| 型號： | UPA1774G |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING DUAL P-CHANNEL POWER MOSFET |
| 中文描述： | 切換雙P -溝道功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 78K |
| 代理商： | UPA1774G |
Data Sheet G15380EJ2V0DS
2
μ
PA1774
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
60 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
16 V, V
DS
= 0
V
m
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
=
10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
10 V, I
D
=
2.0 A
2.5
4.3
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
10 V, I
D
=
2.0 A
200
250
m
R
DS(on)2
V
GS
=
4.5 V, I
D
=
2.0 A
230
300
m
R
DS(on)3
V
GS
=
4.0 V, I
D
=
2.0 A
240
330
m
Input Capacitance
C
iss
V
DS
=
10 V
420
pF
Output Capacitance
C
oss
V
GS
= 0 V
80
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
30
pF
Turn-on Delay Time
t
d(on)
V
DD
=
30 V, I
D
=
2.0 A
8
ns
Rise Time
t
r
V
GS
=
10 V
5
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
35
ns
Fall Time
t
f
8
ns
Total Gate Charge
Q
G
V
DD
=
48 V
10
nC
Gate to Source Charge
Q
GS
V
GS
=
10 V
1.7
nC
Gate to Drain Charge
Q
GD
I
D
=
2.8 A
2.2
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 2.8 A, V
GS
= 0 V
0.89
V
Reverse Recovery Time
t
rr
I
F
= 2.8 A, V
GS
= 0 V
45
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
65
μ
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG
L
V
DD
V
GS
=
–
20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
)
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
DS
Wave Form
V
GS
(
)
10%
90%
10%
0
V
DS
(
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
V
DS
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
V
GS
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