參數(shù)資料
型號: UPA1731
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開關(guān)P溝道功率MOS FET工業(yè)用
文件頁數(shù): 2/8頁
文件大?。?/td> 72K
代理商: UPA1731
Data Sheet G14285EJ1V0DS00
2
μ
PA1731
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
10 V, I
D
=
5.0 A
10.3
13.0
m
R
DS(on)2
V
GS
=
4.5 V, I
D
=
5.0 A
14.6
19.5
m
R
DS(on)3
V
GS
=
4.0 V, I
D
=
5.0 A
16.5
22.0
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
=
10 V, I
D
=
1 mA
1.0
1.6
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
10 V, I
D
=
5.0 A
8.0
18.0
S
Drain Leakage Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
#
20 V, V
DS
= 0 V
V
DS
=
10 V
#
10
μ
A
Input Capacitance
C
iss
2600
pF
Output Capacitance
C
oss
V
GS
= 0 V
810
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
350
pF
Turn-on Delay Time
t
d(on)
I
D
=
5.0 A
32
ns
Rise Time
t
r
V
GS(on)
=
10 V
185
ns
Turn-off Delay Time
t
d(off)
V
DD
=
15 V
155
ns
Fall Time
t
f
R
G
= 10
110
ns
Total Gate Charge
Q
G
I
D
=
10 A
46
nC
Gate to Source Charge
Q
GS
V
DD
=
24 V
6.5
nC
Gate to Drain Charge
Q
GD
V
GS
=
10 V
12
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 10 A, V
GS
= 0 V
0.80
V
Reverse Recovery Time
t
rr
50
ns
Reverse Recovery Charge
Q
rr
I
F
= 10 A, V
GS
= 0 V
di/dt = 100 A/
μ
s
46
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
V
DD
R
G
R
G
=
10
PG.
Duty Cycle
1
%
V
GS (on)
90
%
010
%
90
%
I
D
010
%
I
D
V
GS
90
%
10
%
t
d (on)
t
on
t
off
t
r
t
d (off)
t
f
WGS
D
D.U.T.
50
PG.
V
DD
I
G
=
2
mA
R
L
0
V
GS
τ
τ
=
1
s
μ
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