參數(shù)資料
型號: UPA1730G
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開關(guān)P溝道功率MOS FET工業(yè)用
文件頁數(shù): 4/8頁
文件大?。?/td> 71K
代理商: UPA1730G
Data Sheet G14284EJ1V0DS00
4
μ
PA1730
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
0.001
0.1
0.01
0.0001
1
10
100
Pulsed
0
2
1
3
4
V
DS
=
10
V
50
C
25
C
75C
T
A
=
150C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0
0.4
0.6
0.8
10
0.2
Pulsed
V
GS
=
10
V
4.5
V
4.0
V
50
60
40
20
30
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
f
|
I
D
- Drain Current - A
1
1
10
10
100
0.1
V
DS
=
10 V
Pulsed
25C
125C
150
C
T
A
=
50
C
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
I
D
=
13.0
A
V
GS
- Gate to Source Voltage - V
R
D
0
5
10
10
15
20
6.5
A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
20
15
10
5
–10
–100
0.1
0
– 1000
–1
Pulsed
V
GS
=
4.0
V
V
GS
=
4.5
V
V
GS
=
10
V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
=
10
V
I
D
=
1
mA
50
0
150
50
0
0.5
100
1.0
1.5
2.0
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