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參數(shù)資料
| 型號(hào)： | UPA1728 |
| 廠商： | NEC Corp. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | UPA1728 |
1999,2000
MOS FIELD EFFECT TRANSISTOR
μ
PA1728
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
G14321EJ1V0DS00 (1st edition)
January 2000 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
#
shows major revised points.
PACKAGE DRAWING (Unit : mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 Max.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 Max.
0.10
1
4
8
5
1, 2, 3
4
5, 6, 7, 8
; Source
; Gate
; Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
The
μ
PA1728 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Single chip type
Low On-state Resistance
R
DS(on)1
= 19 m
(TYP.) (V
GS
= 10 V, I
D
= 4.5 A)
R
DS(on)2
= 23 m
(TYP.) (V
GS
= 4.5 V, I
D
= 4.5 A)
R
DS(on)3
= 24 m
(TYP.) (V
GS
= 4.0 V, I
D
= 4.5 A)
Low C
iss
: C
iss
= 1700 pF (TYP.)
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1728
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC)
Drain Current (Pulse)
Note1
Total Power Dissipation (T
A
= 25 °C)
Note2
I
D(DC)
±9
A
I
D(pulse)
±36
A
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3.
Starting T
ch
= 25°C, R
G
= 25
, T
GS
= 20 V
→
0 V
T
stg
I
AS
E
AS
–55 to + 150
9
8.1
°C
A
mJ
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
#
#
#
#
#
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| UPA1730 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1728G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 9A I(D) | SO |
| UPA1728G(0)-E1-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1728G-E1-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 9A 8-Pin Power SOP T/R Cut Tape |
| UPA1728G-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1730 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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