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參數(shù)資料
| 型號(hào)： | UPA1716G |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關(guān)P溝道功率MOS FET工業(yè)用 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | UPA1716G |
Data Sheet G13727EJ1V0DS00
2
μ
PA1716
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
DS(on)1
V
GS
=
–
10 V, I
D
=
–
4.0 A
12.5
16
m
R
DS(on)2
V
GS
=
–
4.5 V, I
D
=
–
4.0 A
17
23
m
Drain to Source On-state Resistance
R
DS(on)3
V
GS
=
–
4.0 V, I
D
=
–
4.0 A
19
26
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
=
–
10 V, I
D
=
–
1 mA
–
1.0
–
1.6
–
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
–
10 V, I
D
=
–
4.0 A
7
14
S
Drain Leakage Current
I
DSS
V
DS
=
–
30 V, V
GS
= 0 V
–
1
#
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
μ
A
Input Capacitance
C
iss
2100
pF
Output Capacitance
C
oss
700
pF
Reverse Transfer Capacitance
C
rss
V
DS
=
–
10 V
V
GS
= 0 V
f = 1 MHz
300
pF
Turn-on Delay Time
t
d(on)
30
ns
Rise Time
t
r
150
ns
Turn-off Delay Time
t
d(off)
120
ns
Fall Time
t
f
I
D
=
–
4.0 A
V
GS(on)
=
–
10 V
V
DD
=
–
15 V
R
G
= 10
76
ns
Total Gate Charge
Q
G
40
nC
Gate to Source Charge
Q
GS
6
nC
Gate to Drain Charge
Q
GD
I
D
=
–
8.0 A
V
DD
=
–
24 V
V
GS
=
–
10 V
10
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 8.0 A, V
GS
= 0 V
0.8
V
Reverse Recovery Time
t
rr
45
ns
Reverse Recovery Charge
Q
rr
I
F
= 8.0 A, V
GS
= 0 V
di/dt = 100 A/
μ
s
33
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
V
DD
R
G
R
G
=
10
PG.
Duty Cycle
≤
1
%
V
GS (on)
90
%
010
%
90
%
I
D
010
%
I
D
V
GS
90
%
10
%
t
d (on)
t
on
t
off
t
r
t
d (off)
t
f
GS
Wave Form
D
Wave Form
D.U.T.
50
PG.
V
DD
I
G
=
2
mA
R
L
0
V
GS
τ
τ
=
1
μ
s
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| UPA1720 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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