參數(shù)資料
型號(hào): UPA1709G
廠商: NEC Corp.
元件分類: 功率晶體管
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 79K
代理商: UPA1709G
2
μ
PA1709
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
DS(on)1
V
GS
= 10 V, I
D
= 4.5 A
9.3
12.5
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 4.5 V, I
D
= 4.5 A
13.8
20.0
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 4.5 A
8.0
14
S
Drain Leakage Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= ±25 V, V
DS
= 0 V
±10
μ
A
Input Capacitance
C
iss
1850
pF
Output Capacitance
C
oss
790
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
330
pF
Turn-on Delay Time
t
d(on)
27
ns
Rise Time
t
r
95
ns
Turn-off Delay Time
t
d(off)
110
ns
Fall Time
t
f
I
D
= 4.5 A
V
GS(on)
= 10 V
V
DD
= 20 V
R
G
= 10
70
ns
Total Gate Charge
Q
G
43.0
nC
Gate to Source Charge
Q
GS
6.0
nC
Gate to Drain Charge
Q
GD
I
D
= 9.0 A
V
DD
= 32 V
V
GS
= 10 V
14.0
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 9.0 A, V
GS
= 0 V
0.78
V
Reverse Recovery Time
t
rr
47
ns
Reverse Recovery Charge
Q
rr
I
F
= 9.0 A, V
GS
= 0 V
di/dt = 100 A/
μ
s
44
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
V
DD
R
G
R
G
=
10
PG.
Duty Cycle
1
%
V
GS (on)
90
%
010
%
90
%
I
D
010
%
I
D
V
GS
90
%
10
%
t
d (on)
t
on
t
off
t
r
t
d (off)
t
f
V
GS
Wave Form
D
D.U.T.
50
PG.
V
DD
I
G
=
2
mA
R
L
0
V
GS
t
t =
1
s
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