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參數(shù)資料
| 型號： | UPA1704G |
| 廠商： | NEC Corp. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 63K |
| 代理商： | UPA1704G |
Data Sheet D12908EJ1V1DS00
2
μ
PA1704
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 4.0 V, I
D
= 5.0 A
9.8
13
m
R
DS(on)2
V
GS
= 2.5 V, I
D
= 5.0 A
12
16
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
0.5
0.8
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 5.0 A
10
25
S
Drain Leakage Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= ±12 V, V
DS
= 0 V
±10
μ
A
Input Capacitance
C
iss
V
DS
= 10 V
2700
pF
Output Capacitance
C
oss
V
GS
= 0 V
880
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
400
pF
Turn-on Delay Time
t
d(on)
I
D
= 5.0 A
25
ns
Rise Time
t
r
V
GS(on)
= 4.0 V
95
ns
Turn-off Delay Time
t
d(off)
V
DD
= 15 V
235
ns
Fall Time
t
f
R
G
= 10
200
ns
Total Gate Charge
Q
G
I
D
= 10 A
38
nC
Gate to Source Charge
Q
GS
V
DD
= 24 V
3.3
nC
Gate to Drain Charge
Q
GD
V
GS
= 4.0 V
15
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 10 A, V
GS
= 0 V
0.8
V
Reverse Recovery Time
t
rr
48
ns
Reverse Recovery Charge
Q
rr
I
F
= 10 A, V
GS
= 0 V
di/dt = 100 A/
μ
s
53
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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相關(guān)代理商/技術(shù)參數(shù) |
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| UPA1706G | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1706TP | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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