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參數(shù)資料
| 型號： | UPA1456H |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| 中文描述： | NPN硅晶體管陣列低功率高速開關(guān)使用工業(yè)用達(dá)林頓晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 55K |
| 代理商： | UPA1456H |
μ
PA1456
3
TYPICAL CHARACTERISTICS (T
a
= 25 C)
DERATING CURVE OF SAFE
OPERATING AREA
d
0
100
T
C
- Case Temperature - C
SAFE OPERATING AREA
I
C
1
10
V
CE
- Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
0
4
T
a
- Ambient Temperature - C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
0
30
T
C
- Case Temperature - C
DC CURRENT GAIN vs. COLLECTOR CURRENT
h
F
0.01
100000
I
C
- Collector Current - A
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
V
C
0.1
10
I
C
- Collector Current - A
80
60
40
20
50
100
150
S/bLimted
DsiptonLmtd
5
2
1
0.5
0.2
0.1
5
10
50
100
V
C
Single Pulse
NEC
PA1456
3
2
1
25
50
75
100
125
150
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
20
10
25
50
75
100
125
150
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
10000
1000
10
0.1
1
10
V
CE
= 2.0 V
Pulse Test
1
0.1
1
–10
SbLme
Dsspaion
1m
PW=30
20
100
25
–25
T
a
= 125
I
C
= 1000·I
B
Pulse Test
T
a
= 125 C
75 C
25 C
–25 C
3m
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|---|---|
| UPA1457H | PNP SILICON EPITAXIAL POWER TRANSISTOR ARRAY LOW SPEED SWITCHING(DARLINGTON) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1456H(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1457H | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON EPITAXIAL POWER TRANSISTOR ARRAY LOW SPEED SWITCHING(DARLINGTON) |
| UPA1458 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| UPA1458H | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| UPA1458H-AZ | 制造商:Renesas Electronics 功能描述:Trans Darlington NPN 70V 5A 10-Pin SIP Cut Tape |
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