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參數(shù)資料
| 型號(hào)： | UPA1456H |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| 中文描述： | NPN硅晶體管陣列低功率高速開關(guān)使用工業(yè)用達(dá)林頓晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 55K |
| 代理商： | UPA1456H |
μ
PA1456
2
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Leakage Current
I
CBO
10
μ
A
V
CB
= 100 V, I
E
= 0
Emitter Leakage Current
I
EBO
10
mA
V
EB
= 5 V, I
C
= 0
DC Current Gain
h
FE1
*
2000
7000
20000
—
V
CE
= 2 V, I
C
= 2 A
DC Current Gain
h
FE2
*
500
3000
—
V
CE
= 2 V, I
C
= 4 A
Collector Saturation Voltage
V
CE(sat)
*
0.9
1.5
V
I
C
= 2 A, I
B
= 2 mA
Base Saturation Voltage
V
BE(sat)
*
1.6
2
V
I
C
= 2 A, I
B
= 2 mA
Turn On Time
t
on
1
μ
s
Storage Time
t
stg
3
μ
s
Fall Time
t
f
1
μ
s
*
PW
≤
350
μ
s, Duty Cycle
≤
2 % / pulsed
SWITCHING TIME TEST CIRCUIT
I
B2
V
IN
PW
PW ..
Duty Cycle
≤
2 %
V
BB
..
I
B1
I
C
T.U.T.
R
L
= 25
V
CC
..
Base Current
Wave Form
Collector
Current
Wave Form
I
B1
I
B2
I
C
10 %
90 %
t
on
t
stg
t
f
I
C
= 2 A
I
B1
= –I
B2
= 2 mA
V
CC
..
L
..
See test circuit
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| UPA1457H | PNP SILICON EPITAXIAL POWER TRANSISTOR ARRAY LOW SPEED SWITCHING(DARLINGTON) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1456H(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1457H | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON EPITAXIAL POWER TRANSISTOR ARRAY LOW SPEED SWITCHING(DARLINGTON) |
| UPA1458 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| UPA1458H | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| UPA1458H-AZ | 制造商:Renesas Electronics 功能描述:Trans Darlington NPN 70V 5A 10-Pin SIP Cut Tape |
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