- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383973 > UMD6N (Rohm CO.,LTD.) General purpose (dual digital transistors) PDF資料下載
參數(shù)資料
| 型號(hào)： | UMD6N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 66K |
| 代理商： | UMD6N |
EMD6 / UMD6N / IMD6A
Transistors
General purpose
(dual digital transistors)
EMD6 / UMD6N / IMD6A
!
Features
1) Both the DTA143T chip and DTC143T chip in an EMT
or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!
Structure
A PNP and NPN digital transistor
(each with a single built in resistor)
The following characteristics apply to both the DTr
1
and
DTr
2
, however, the “
” sign on DTr
2
values for the PNP
type have been omitted.
!
Equivalent circuit
EMD6 / UMD6N
IMD6A
DTr
2
DTr
1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
(6)
(4)
(5)
(6)
R
1
R
1
DTr
2
DTr
1
R
1
R
1
R
1
=4.7k
R
1
=4.7k
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
Limits
Unit
V
CBO
50
V
50
V
V
V
CEO
V
EBO
5
I
C
mA
100
Tj
150
C
Tstg
55
～+
150
C
P
C
EMD6, UMD6N
150 (TOTAL)
mW
IMD6A
300 (TOTAL)
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
!
External dimensions
(Units : mm)
ROHM : EMT6
EMD6
ROHM : UMT6
EIAJ : SC-88
EMD6N
Abbreviated symbol : D6
Abbreviated symbol : D6
Abbreviated symbol : D6
ROHM : SMT6
EIAJ : SC-74
IMD6A
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
0
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0
0
0
0
1
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UMD9N | ER 6C 6#16S PIN RECP BOX |
| UMF22N | Power management (dual transistors) |
| UMF5N | Power management (dual transistors) |
| UMF6N | Power management (dual transistors) |
| UMH14N | General purpose (dual digital transistors) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UMD6NTR | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN/PNP 50V 100MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMD9N | 制造商:ROHM Semiconductor 功能描述:LEAK ABSORB PNP+NPN SM DIGITAL TRANSISTOR UMT5 / 6 制造商:ROHM Semiconductor 功能描述:LEAK ABSORB PNP+NPN SM DIGITAL TRANSISTOR UMT5 / 6 - free partial T/R at 500. |
| UMD9N_10 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Digital Transistor (Dual Digital Transistors for Inverter Drive) |
| UMD9NTR | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN/PNP 50V 70MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMEC-03 | 功能描述:UM MAT 3 METER EXTENSION CABLE 制造商:omron automation and safety 系列:* 零件狀態(tài):在售 標(biāo)準(zhǔn)包裝:1 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。