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參數(shù)資料
| 型號(hào)： | UK2996G-TF3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | HALOGEN FREE, TO-220F, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 246K |
| 代理商： | UK2996G-TF3-T |
UK2996
MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 7
www.unisonic.com.tw
QW-R502-063.B
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
600
V
Continuous Drain Current
ID
10
A
Pulsed Drain Current
IDM
30
A
Drain to Gate Voltage (RGS = 20 k)
VDGR
600
V
Gate to Source Voltage
VGSS
±30
V
Avalanche Current
IAR
10
A
Single Pulsed Avalanche energy (Note 2)
EAS
252
mJ
Repetitive Avalanche Energy (Note 3)
EAR
4.5
mJ
TO-220
45
Total Power Dissipation (Tc = 25°C)
TO-220F/TO-220F1
PD
36
W
Operating Junction Temperature
TJ
-55 ~ +150
°
C
Storage Temperature
TSTG
-55 ~ +150
°
C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 4.41 mH, IAR = 10 A, VDD = 90 V, RG = 25 , starting TJ = 25°C.
3. Pulse width and frequency is limited by TJ.
THERMAL DATA
CHARACTERISTICS
SYMBOL
RATINGS
UNIT
TO-220
62.5
Channel to Ambient
TO-220F/TO-220F1
θJA
62.5
°
C / W
TO-220
2.78
Channel to Case
TO-220F/TO-220F1
θJC
3.47
°
C / W
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
GateSource Breakdown Voltage
BVGSS VDS = 0V, IG = ±10A
±30
V
DrainSource Breakdown Voltage
BVDSS VGS = 0V, ID = 10mA
600
V
Gate Threshold Voltage
VGS(TH) VDS = 10V, ID = 1mA
2.0
4.0
V
Gate Source Leakage Current
IGSS
VGS = ±25V, VDS = 0V
±10
A
Drain Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
100
A
Static DrainSource ON Resistance
RDS (ON) VGS = 10V, ID = 5A
0.74 1. 0
Forward Transconductance
gFS
VDS = 10V, ID = 5A
3.4
6.8
S
Input Capacitance
CISS
1500
Reverse Transfer Capacitance
CRSS
13
Output Capacitance
COSS
VDS = 20V, VGS = 0V, f = 1MHz
140
pF
Total Gate Charge
QG
38
GateSource Charge
QGS
21
GateDrain Charge
QGD
ID = 10A, VDD ≈ 400V, VGS = 10V
17
nC
Turn-on Delay Time
tON
55
Turn-on Rise Time
tR
15
Turnoff Delay Time
tOFF
145
Switching
Time
Turn-off Fall Time
tF
10V
0V
VGS
ID=5A
VOUT
tP=10μs, Duty ≤1%
VDD ≈ 300V
50
RL=60
27
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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| UK2996L-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:600V SILICON N-CHANNEL POWER MOSFET |
| UK2996L-TF1-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:600V SILICON N-CHANNEL POWER MOSFET |
| UK2996L-TF2-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:600V SILICON N-CHANNEL POWER MOSFET |
| UK2996L-TF3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:600V SILICON N-CHANNEL POWER MOSFET |
| UK2996-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:600V SILICON N-CHANNEL POWER MOSFET |
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