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參數(shù)資料
| 型號： | U634H256CSC35 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 239K |
| 代理商： | U634H256CSC35 |
6
December 12, 1997
U634H256
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L- to H-level
undefined
H- to L-level
i:
j:
If W is LOW and when E goes LOW, the outputs remain in the high impedance state.
E or W must be V
IH
during address transition.
Write Cycle #1: W-controlled
j
Write Cycle #2: E-controlled
j
t
h(D)
Ai
E
W
DQi
Input
DQi
Output
t
cW
t
su(E)
t
h(A)
t
w(W)
t
su(D)
t
dis(W)
t
en(W)
Address Valid
Input Data
High Impedance
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t
su(A-WH)
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16
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t
su(A)
t
h(D)
Ai
E
W
DQi
Input
DQi
Output
t
cW
t
w(E)
t
h(A)
t
su(D)
Input Data
t
su(W)
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Previous Data
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t
su(A)
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High Impedance
Address Valid
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U634H256CSC45 | NVRAM (EEPROM Based) |
| U634H256CSK25 | NVRAM (EEPROM Based) |
| U634H256CSK35 | NVRAM (EEPROM Based) |
| U634H256CSK45 | Precision low noise dual operational amplifier |
| U634H256S2A25G1 | PowerStore 32K x 8 nvSRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U634H256CSC45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256CSK25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256CSK35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256CSK45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256D1A25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWERSTORE 32K X 8 NVSRAM |
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