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參數(shù)資料
| 型號： | U634H256CSC35 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 239K |
| 代理商： | U634H256CSC35 |
10
December 12, 1997
U634H256
C
ESD Class
B > 1000 V
z
C > 500 V
S
U634H256
25
C
Example
IC Code Numbers
Type
Package
D1= PDIP (600 mil)
S = SOP (300 mil)
Operating Temperature Range
C = 0 to 70 °C
K = -40 to 85 °C
Access Time
25 = 25 ns
35 = 35 ns (on special request)
45 = 45 ns (on special request)
The date of manufacture is given by the last 4 digits of the mark, the first 2 digits indicating the year, and the last
2 digits the calendar week.
z: ESD protection > 1000 V and 2000 V under development
All Pins not under test must be connected with ground by capacitors.
Capacitance
e
Conditions
Symbol
Min.
Max.
Unit
Input Capacitance
V
CC
V
I
f
T
a
= 5.0 V
= V
SS
= 1MHz
= 25
°
C
C
I
8
pF
Output Capacitance
C
O
7
pF
V
CCXY
V
CAP
Test Configuration for Functional Check
V
IH
V
IL
V
SS
480
255
30 pF
x
V
O
S
m
I
r
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
HSB
x:
y:
In measurement of t
dis
-times and t
en
-times the capacitance is 5 pF.
Between V
CC
and V
SS
must be connected a high frequency bypass capacitor 0.1
μ
F to avoid disturbances.
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A14
HSB
E
W
G
5 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U634H256CSC45 | NVRAM (EEPROM Based) |
| U634H256CSK25 | NVRAM (EEPROM Based) |
| U634H256CSK35 | NVRAM (EEPROM Based) |
| U634H256CSK45 | Precision low noise dual operational amplifier |
| U634H256S2A25G1 | PowerStore 32K x 8 nvSRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U634H256CSC45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256CSK25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256CSK35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256CSK45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256D1A25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWERSTORE 32K X 8 NVSRAM |
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