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| 型號： | TWR-ELEV |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 6/48頁 |
| 文件大?。?/td> | 0K |
| 描述： | TOWER ELEVATOR BOARDS HARDWARE |
| 其它有關(guān)文件： | TWR-ELEV Dummy Schematic TWR-ELEV Functional Schematic |
| 產(chǎn)品培訓模塊： | MCF51CN Family - Ultimate Ethernet Solutions Tower System |
| 特色產(chǎn)品： | The Tower System |
| 標準包裝： | 1 |
| 系列： | ColdFire® |
| 附件類型： | 2 個升降機板 |
| 適用于相關(guān)產(chǎn)品： | Freescale 電源塔系統(tǒng) |
| 產(chǎn)品目錄頁面： | 734 (CN2011-ZH PDF) |
| 相關(guān)產(chǎn)品： | TWR-SER-ND - TOWER SERIAL I/O HARDWARE TWR-MCF51CN-ND - KIT TOWER BOARD TWR-MCF51CN-KIT-ND - KIT TOWER BOARD/SERIAL/ELEVATOR |
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MCF51CN128 ColdFire Microcontroller Data Sheet, Rev. 4
Electrical Characteristics
Freescale Semiconductor
14
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During
the device qualification ESD stresses were performed for the human body model (HBM), the machine model (MM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 6. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
Machine
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
Latch-up
Minimum input voltage limit
—
– 2.5
V
Maximum input voltage limit
—
7.5
V
Table 7. ESD and Latch-Up Protection Characteristics
No.
Rating1
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
± 2000
—
V
2
Machine model (MM)
VMM
± 200
—
V
3
Charge device model (CDM)
VCDM
± 500
—
V
4
Latch-up current at TA = 85°CILAT
± 100
—
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TWR-ELEV | 制造商:Freescale Semiconductor 功能描述:Tower System - Elevator Boards |
| TWR-FRAM | 功能描述:存儲器 IC 開發(fā)工具 Freescale Tower FRAM Daughter Card RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Reference Boards 工具用于評估:M24LR64-R 存儲容量:64 kbit 存儲類型:EEPROM 工作電源電壓:1.8 V to 5.5 V |
| TWR-HW | 功能描述:WIRELESS RELAY 120/277 HARD WIRE 制造商:thomas research products 系列:ZenNet 零件狀態(tài):過期 配件類型:無線繼電器 配套使用產(chǎn)品/相關(guān)產(chǎn)品:* 標準包裝:1 |
| TWR-IND-IO | 功能描述:界面開發(fā)工具 IND CTRL Tower IO RoHS:否 制造商:Bourns 產(chǎn)品:Evaluation Boards 類型:RS-485 工具用于評估:ADM3485E 接口類型:RS-485 工作電源電壓:3.3 V |
| TWR-K20D50M | 功能描述:開發(fā)板和工具包 - ARM PK20DX128VLH5 EvBrd RoHS:否 制造商:Arduino 產(chǎn)品:Development Boards 工具用于評估:ATSAM3X8EA-AU 核心:ARM Cortex M3 接口類型:DAC, ICSP, JTAG, UART, USB 工作電源電壓:3.3 V |
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