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參數(shù)資料
| 型號： | TSAL6100 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 950nm 2-Pin T-1 3/4 Bulk |
| 中文描述： | Infrared Emitters 10 Degree 40mW |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 100K |
| 代理商： | TSAL6100 |
TSAL6100
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 24-Aug-11
2
Document Number: 81009
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0
10
20
30
40
50
60
70
80
90
100
21211
T
amb
- Ambient Temperature (°C)
P
V
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
90 100
T
amb
- Ambient Temperature (°C)
21212
I
F
R
thJA
= 230 K/W
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
I
F
= 100 mA, t
p
= 20 ms
TEST CONDITION
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
e
TK
e
p
TK
p
t
r
t
f
d
MIN.
TYP.
1.35
2.6
- 1.8
MAX.
1.6
3
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
mm
Forward voltage
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
Temperature coefficient of V
F
Reverse current
Junction capacitance
10
25
130
1000
35
- 0.6
± 10
940
50
0.2
800
800
3.7
Radiant intensity
80
650
400
Radiant power
Temperature coefficient of
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
p
Rise time
Fall time
Virtual source diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Method: 63 % encircled energy
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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