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參數(shù)資料
| 型號： | TSAL7200 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 940nm 2-Pin T-1 3/4 Bulk |
| 中文描述： | Infrared Emitters 17 Degree 40mW |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 96K |
| 代理商： | TSAL7200 |
TSAL7200
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 24-Aug-11
1
Document Number: 81012
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
DESCRIPTION
TSAL7200 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a clear, untinted plastic package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Peak wavelength:
λ
p
= 940 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 17°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared
requirements
Free air transmission systems
Infrared source for optical counters and card readers
remote
control
units
with
high
power
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT
TSAL7200
I
e
(mW/sr)
60
(deg)
± 17
λ
p
(nm)
940
t
r
(ns)
800
ORDERING INFORMATION
ORDERING CODE
TSAL7200
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
t
p
/T = 0.5, t
p
= 100 μs
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm soldered
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
VALUE
5
100
200
1.5
160
100
- 40 to + 85
- 40 to + 100
260
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
t
p
= 100 μs
Thermal resistance junction/ambient
on PCB
R
thJA
230
K/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSAL7200_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs |
| TSAL7200_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs |
| TSAL7200-ASZ | 制造商:Vishay Semiconductors 功能描述: |
| TSAL7300 | 功能描述:紅外發(fā)射源 High Power 940nm 5 Volt 35mW 22 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSAL7300_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs |
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