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| 型號： | TPS65910RSLT |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 電源管理 |
| 英文描述： | POWER SUPPLY SUPPORT CKT, PQCC48 |
| 封裝： | 6 X 6 MM, 0.40 MM PITCH, GREEN, PLASTIC, VQFN-48 |
| 文件頁數(shù)： | 8/86頁 |
| 文件大小： | 534K |
| 代理商： | TPS65910RSLT |
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PRODUCTPREVIEW
SWCS046A – MARCH 2010 – REVISED MAY 2010
www.ti.com
VDD2 SMPS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input voltage (VCC2 and VCC4) VIN VIOUT = 0.6 V to 1.5 V, VGAIN_SEL = 00
2.7
5.5
V
VOUT + 0.9
VIOUT > 1.8 V, VGAIN_SEL = 10 or 11
5.5
V
DC output voltage (VOUT)
VGAIN_SEL = 00, IOUT = 0 to IOUTmax:
max programmable voltage, SEL[6:0] = 1001011
1.5
default, BOOT[1:0] = 01
–3%
1.2
+3%
min programmable voltage, SEL[6:0] = 0000011
0.6
V
SEL[6:0] = 000000: power down
0
VGAIN_SEL = 10, SEL = 0101011 = 43
–3%
2.2
+3%
VGAIN_SEL = 11, default, BOOT[1:0] = 00
–3%
3.3
+3%
DC output voltage programmable
VGAIN_SEL = 00, 72 steps
12.5
mV
step (VOUTSTEP)
Rated output current IOUTmax
1500
mA
P-channel MOSFET
VIN = VINmin
300
m
Ω
On-resistance RDS(ON)_PMOS
VIN = 3.8 V
250
400
P-channel leakage current ILK_PMOS
VIN = VINmax, SW2 = 0 V
2
A
N-channel MOSFET
VIN = VMIN
300
m
Ω
On-resistance RDS(ON)_NMOS
VIN = 3.8 V
250
400
N-channel leakage current ILK_NMOS
VIN = VINmax, SW2 = VINmax
2
A
PMOS current limit (high-side)
VIN = VINmin to VINmax
1800
mA
NMOS current limit (low-side)
VIN = VINmin to VINmax, source current load
1800
mA
VIN = VINmin to VINmax, sink current load
1800
DC load regulation
On mode, IOUT = 0 to IOUTmax
20
mV
DC line regulation
On mode, VIN = VINmin to VINmax @ IOUT = IOUTmax
20
mV
Transient load regulation
VIN = 3.8 V, VOUT = 1.2 V
50
mV
IOUT = 0 to 500 mA , Max slew = 100 mA/s
IOUT = 700 mA to 1.2 A , Max slew = 100 mA/s
t on, Off to on
IOUT = 200 mA
350
s
From VOUT = 0.6 V to 1.5 V and VOUT = 1.5 V to
Output voltage transition rate
0.6 V IOUT = 500 mA
TSTEP[2:0] = 001
12.5
TSTEP[2:0] = 011 (default)
7.5
s
TSTEP[2:0] = 111
2.5
0.025
Power-save mode ripple voltage
PFM (pulse skip mode) mode IOUT = 1 mA
VPP
VOUT
Overshoot
3%
Switching frequency
2.7
3
3.3
MHz
Minimum On time
35
ns
P-Channel MOSFET
VFB2 internal resistance
0.5
1
M
Ω
Ground current (IQ)
Off
1
PWM mode, IOUT = 0 mA, VIN = 3.8 V,
7500
VDD2_PSKIP = 0
A
PFM (pulse skipping) mode, no switching
78
Low-power (pulse skipping) mode, no switching
ST[1:0] = 11
63
PWM mode, DCRL < 50 mΩ, VOUT = 1.2 V, VIN =
Conversion efficiency
3.6 V:
16
Copyright 2010, Texas Instruments Incorporated
Product Folder Link(s): TPS65910
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