參數資料
型號： TPS65810RTQ
廠商： TEXAS INSTRUMENTS INC
元件分類： 電源管理
英文描述： 9-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC56
封裝： 8 X 8 MM, ROHS COMPLIANT, PLASTIC, QFN-56
文件頁數： 8/99頁
文件大小： 2128K
代理商： TPS65810RTQ
www.ti.com
ELECTRICAL CHARACTERISTICS – LED AND PWM DRIVERS
Current range, Vin = 3.3 V,
I
O(SM3) +
V(SM3REF)
R
FB3
SLVS658B – MARCH 2006 – REVISED FEBRUARY 2007
ELECTRICAL CHARACTERISTICS – ADC (continued)
Over recommended operating conditions (typical values at TJ = 25°C), V(ADC_REF) =2.535v if external reference voltage is
used, application circuit as in Figure 3 (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INTERNAL REFERENCE POWER CONSUMPTION
PDACTIVE
Power dissipation
Conversion active
2.3
mW
PDARMED
Power dissipation
Not converting
0.43
mW
TRIGGER TIMING CHARACTERISTICS
tDELAY(TRG)
Trigger delay time accuracy
Time range, set via I2C register ADC_DELAY
0
750
uS
Relative to typical value set via I2C
–20%
+20%
tWAIT(TRG)
Trigger wait time accuracy
Time range, set via I2C register ADC_WAIT
0
20.48
mS
Relative to typical value set via I2C
–20%
+20%
Over recommended operating conditions (typical values at TJ = 25°C), application circuit as in Figure 3 (unless otherwise
noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SM3 BOOST CONVERTER, WHITE LED CONSTANT CURRENT DRIVER
VVIN(SM3)
Input Voltage range
V(OUT) = 3.3 V
3
4.7
V
VOVP3
Output overvoltage trip
OVP detected at V(SM3) > VOVP3
26.5
29
30
V
VHYS(OVP3)
Output overvoltage hysteresis
OVP not detected at V(SM3) < VOVP3 – VHYS(OVP3)
1.8
V
LED current below regulation point at
VSM3REF
LED current sense threshold
244
252
260
mV
V(FB3) < VSM3REF
0
25
mA
IO(SM3)
LED current
Total accuracy, IO(SM3) = 10mA
–10%
10%
DSM3SW = 0% to 99.6%, set
via I2C,
DSM3SW
LED switch duty cycle
Duty cycle range
–
256 steps, 0.4% minimum
step
SM3_LF_OSC = 0
122
LED switch duty cycle pattern
256 pulses within repetition
FREP_SM3
Hz
repetition rate
rate time
SM3_LF_OSC = 1
183
LED switch MOSFET
RDSON(SM3SW)
V(OUT)=3.6 V; I(SM3SW)=20 mA
1
2
on-resistance
ILKG(SM3SW)
LED switch MOSFET leakage
1
A
Power stage MOSFET
RDSON(L3)
V(OUT) = 3.6 V; I(L3) = 200 mA
300
600
m
on-resistance
Power stage MOSFET
ILKG(L3)
1
A
leakage
Power stage MOSFET current
IMAX(L3)
3 V < V(OUT) < 4.7 V
400
500
600
mA
limit
PWM DRIVER, PWM OPEN DRAIN OUTPUT
VOL(PWM)
Low level output voltage
I(PWM)= 150 mA
0.5
V
Set via I2C, FPWM =
Frequency range
Hz
0.5/1/1.5/2/3/4.5/7.8/15.6
FPWM
PWM driver frequency
Total accuracy, relative to selected value
–20%
+20%
DPWM = 6.25% to 100%, set
DPWM
PWM driver duty cycle
Duty cycle range
via I2C,
–
6.25% minimum step
16
Copyright 2006–2007, Texas Instruments Incorporated
Product Folder Link(s): TPS65810 TPS65811
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TPS65810RTQTG4 功能描述:電池管理 Int Sgl-Cell Lit-Ion Batt & Pwr Mgmt IC RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel
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