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參數(shù)資料
| 型號： | TPS65562RGT |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | BATTERY CHARGE CONTROLLER, PQCC16 |
| 封裝： | PLASTIC, QFN-16 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 534K |
| 代理商： | TPS65562RGT |
www.ti.com
QFNPACKAGE
(TOP VIEW)
16 15 14 13
12
11
10
9
5
6
7
8
1
2
3
4
NC
VBA
T
TEST_GND
NC
PGND
CHG
XFULL
I_PE
AK
N
C
IG
BT
_
VC
C
G
_
IG
BT
SW
VCC
F_ON
Power
PAD
SLVS775 – JUNE 2007
TERMINAL FUNCTIONS
TERMINAL
I/O
DESCRIPTION
NAME
NO.
SW
1, 2
O
Primary side switch. Connect SW to the switched side of the transformer
Power supply input. Connect VCC to an input supply from 2.7 V to 4.0 V. Bypass VCC to GND
VCC
3
I
with a 1
μF ceramic capacitor as close as possible to the IC.
G_IGBT control input. Drives F_ON with the flash discharge signal. A logic high on F_ON drives
F_ON
4
I
G_IGBT high when CHG is Low. See the IGBT driver control section for details.
Primary side Peak current control input. The voltage at I_PEAK sets the peak current into SW.
I_PEAK
5
I
See the Programming Peak Current section for details on selecting VI_PEAK.
G_IGBT
6
O
IGBT gate driver output. G_IGBT swings from PGND to VCC to drive external IGBT devices.
NC
7, 13, 16
No internal connection
Power supply input for IGBT Driver output. Connect IGBT_VCC to an input supply from 2.7 V to
IGBT_VCC
8
I
5.5 V.
Charge completion indicator output. XFULL is an open-drain output that pulls low once the output
XFULL
9
O
is fully charged. XFULL is high impedance during charging and all fault conditions. XFULL is reset
when CHG turns Low from High. See the Indicating Charging status section for details.
Charge control input. Drive CHG high to initiate charging of the output. Drive CHG low to
CHG
10
I
terminate charging.
PGND
11, 12
Power ground. Connect to the ground plane.
TEST_GND
14
Used by TI, should be connected to PGND and ground plane.
Battery voltage monitor input. Connect VBAT to an input supply from 1.6 V to 12 V. Bypass VBAT
to GND with a 10
μF ceramic capacitor (C1 in Figure 1 as close as possible to the battery) and a
VBAT
15
I
1
μF ceramic capacitor (C2 in Figure 1, as close as possible to the IC). It is no problem to input
VBAT before VCC input.
4
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| TPS65562RGTR | 功能描述:功率驅動器IC Integr Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS65562RGTRG4 | 功能描述:功率驅動器IC Photo flash charger w/ IGBT driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS65562RGTT | 功能描述:功率驅動器IC Integr Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS65562RGTTG4 | 功能描述:功率驅動器IC Photo flash charger w/ IGBT driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS65563ARGTR | 功能描述:功率驅動器IC Integr Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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