參數(shù)資料
型號： TPS5211
廠商： Texas Instruments, Inc.
英文描述： HIGH FREQUENCY PROGRAMMABLE HYSTERETIC REGULATOR CONTROLLER
中文描述： 可編程滯高頻穩(wěn)壓控制器
文件頁數(shù)： 19/32頁
文件大小： 469K
代理商： TPS5211
TPS5211
HIGH FREQUENCY PROGRAMMABLE HYSTERETIC
REGULATOR CONTROLLER
SLVS243 – SEPTEMBER 1999
19
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
Table 2. Power Stage Components
Reference Designation
F nction
Function
12-V–Input Power Stage Components
4–A Out
8–A Out
12–A Out
20–A Out
C101
Input capacitor
muRata,
GRM235Y106Z016A,
2 x 10–uF, 16–V, Y5V
muRata,
GRM235Y106Z016A,
4 x 10–uF, 16–V, Y5V
muRata,
GRM235Y106Z016A,
6 x 10–uF, 16–V, Y5V
muRata,
GRM235Y106Z016A,
10 x 10–uF, 16–V, Y5V
C102
Snubber capacitor
muRata,
GRM39X7R102K050A,
1000–pF, 50–V, X7R
muRata,
GRM39X7R102K050A,
1000–pF, 50–V, X7R
muRata,
GRM39X7R102K050A,
2 x 1000–pF, 50–V, X7R
muRata,
GRM39X7R102K050A,
3 x 1000–pF, 50–V, X7R
C103
Output bulk
capacitor
Sanyo,
4TPC150M,
150–uF, 4–V, 20%
Sanyo,
4TPC150M,
2 x 150–uF, 4–V, 20%
Sanyo,
4TPC150M,
3 x 150–uF, 4–V, 20%
Sanyo,
4TPC150M,
4 x 150–uF, 4–V, 20%
C104
Output hi–freq
bypass capacitor
muRata,
GRM235Y106Z016A,
2 x 10–uF, 16–V, Y5V
muRata,
GRM235Y106Z016A,
4 x 10–uF, 16–V, Y5V
muRata,
GRM235Y106Z016A,
6 x 10–uF, 16–V, Y5V
muRata,
GRM235Y106Z016A,
8 x 10–uF, 16–V, Y5V
L101
Input filter
inductor
CoilCraft,
DO1607C–152,
1.5–uH, 2.1–A
CoilCraft,
DO1813HC–122,
1.2–uH, 4.4–A
CoilCraft,
DO1813HC–122,
1.2–uH, 4.4–A
CoilCraft,
DO3316P–152HC,
1.5–uH, 9.0–A
L102
Output filter
inductor
CoilCraft,
DO1813HCP–561,
0.56–uH, 6–A
CoilCraft,
DO3316P–681HC,
0.68–uH, 12–A
Vishay–Dale,
IHLP–5050CE–XX,
0.82–uH, 16–A,
New product
Vishay–Dale,
IHLP–5050CE–XX,
0.5–uH, 25–A,
New product
R101
High–side gate
resistor
10.0–Ohm,
1/16–W, 5%
10.0–Ohm,
1/16–W, 5%
2 x 10.0–Ohm,
1/16–W, 5%
2 x 10.0–Ohm,
1/16–W, 5%
R102
Lo–side gate
resistor
3.3–Ohm,
1/16–W, 5%
3.3–Ohm,
1/16–W, 5%
2 x 3.3–Ohm,
1/16–W, 5%
3 x 3.3–Ohm,
1/16–W, 5%
R103
Snubber resistor
2.7–Ohm,
1/10–W, 5%
2.7–Ohm,
1/10–W, 5%
2 x 2.7–Ohm,
1/10–W, 5%
3 x 2.7–Ohm,
1/10–W, 5%
Q101
Power switch
IR, IRF7811,
NMOS, 11–mOhm
IR, IRF7811,
NMOS, 11–mOhm
IR, 2 x IRF7811,
NMOS, 11–mOhm
IR, 2 x IRF7811,
NMOS, 11–mOhm
Q102
Synchronous switch
IR, IRF7811,
NMOS, 11–mOhm
IR, IRF7811,
NMOS, 11–mOhm
IR, 2 x IRF7811,
NMOS, 11–mOhm
IR, 2 x IRF7811,
NMOS, 11–mOhm
Nominal frequency
700 KHz
Hysteresis window
Nominal frequency measured with Vo set to 2 V.
20 mV
The values listed above are recommendations based on actual test circuits. Many variations of the above are
possible based upon the desires and/or requirements of the user. Performance of the circuit is equally, if not
more, dependent upon the layout than on the specific components, as long as the device parameters are not
exceeded. Fast-response, low-noise circuits require critical attention to the layout details. Even though the
operating frequencies of typical power supplies are relatively low compared to today’s microprocessor circuits,
the power levels and edge rates can cause severe problems both in the supply and the load. The power stage,
having the highest current levels and greatest dv/dt rates, should be given the greatest attention.
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