型號: | TPCS8210 |
廠商: | Toshiba Corporation |
英文描述: | SILICON N CHANNEL MOS TYPE LITHIUM BATTERY APPLICATIONS |
中文描述: | 硅N通道馬鞍山類型鋰電池應(yīng)用 |
文件頁數(shù): | 2/7頁 |
文件大?。?/td> | 426K |
代理商: | TPCS8210 |
相關(guān)PDF資料 |
PDF描述 |
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TPCS8211 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
TPCS8212 | Silicon N Channel MOS Type (U-MOSIII) |
TPD1032F | Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit |
TPD2004F | SILICON MONOLITHIC POWER MOS IC |
TPD2007F | LOW-SIDE POWER SWITCH ARRAY FOR MOTORS SOLENOIDS AND LAMP DRIVES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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TPCS8210(TE12L,Q) | 功能描述:MOSFET N-Ch Dual 20V 5A 0.030 Ohms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
TPCS8210(TE12L,Q,M | 功能描述:MOSFET MOSFET N-Ch Dual 20V 5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
TPCS8210_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications |
TPCS8211 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
TPCS8211(TE12L,Q,M | 功能描述:MOSFET N-ch 20V 6A 0.024 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |