參數(shù)資料
型號(hào): TPC8207
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
中文描述: 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型(U型MOSIII)
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 219K
代理商: TPC8207
TPC8207
2004-07-06
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
114
°C/W
Single-device operation
(Note 3a)
R
th (ch-a) (1)
167
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
278
°C/W
Marking
(Note 6)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: V
DD
=
16 V, T
ch
=
25°C (initial), L
=
1.0 mH, R
G
=
25
, I
AR
=
6 A
Note 5: Repetitive rating: pulse width limited by max channel temperature.
Note 6:
on lower right of the marking indicates Pin 1.
Weekly code:
Week of manufacture
(01 for the first week of a year, : sequential number up to 52 or 53)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
(a)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
(b)
(Three digits)
Year of manufacture
(The last digit of a year)
TP C8 207
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相關(guān)PDF資料
PDF描述
TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II)
TPC8401 80 AMP MINI-ISO AUTOMOTIVE RELAY
TPC8402 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS4)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPC8207(TE12L) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 20V 6A 8-Pin SOP T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 20V 6A 8-SOP
TPC8207(TE12L,Q) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH DUAL 20V 6A SOP-8
TPC8207(TE12L,Q,M) 功能描述:MOSFET N-ch 20V 6A 0.020 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPC8207(TE12L-Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 20V 6A 8-Pin SOP T/R
TPC8207(TE12LQM) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 20V 6A 8-Pin SOP T/R