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參數(shù)資料
| 型號(hào)： | TPC6002 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型（U型MOSII） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 156K |
| 代理商： | TPC6002 |
TPC6002
2001-11-07
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS
II
)
TPC6002
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: R
DS (ON)
= 25 m
(typ.)
High forward transfer admittance: |Y
fs
| =
1
0 S (typ.)
Low leakage current: I
DSS
=
1
0 μA (max) (V
DS
= 30 V)
Enhancement-model: V
th
=
1
.3 to 2.5 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
20 k )
V
DGR
30
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
6
Drain current
Pulse
(Note 1)
I
DP
24
A
Drain power dissipation
(t 5 s)
(Note 2a)
P
D
2.2
W
Drain power dissipation
(t 5 s)
(Note 2b)
P
D
0.7
W
Single pulse avalanche energy (Note 3)
E
AS
5.8
mJ
Avalanche current
I
AR
3
A
Repetitive avalanche energy
(Note 4)
E
AR
0.22
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t 5 s)
(Note 2a)
R
th (ch-a)
56.8
°C/W
Thermal resistance, channel to ambient
(t 5 s)
(Note 2b)
R
th (ch-a)
178.5
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
6
4
1
2
3
5
Marking
(Note 5)
S 2 B
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