參數(shù)資料
型號： TP2522
廠商： ELAN Microelctronics Corp .
英文描述： P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-220V，低門限2.4V，P溝道增強型垂直DMOS結構場效應管)
中文描述： P通道增強模式垂直的DMOS場效應管（擊穿電壓- 220，低門限為2.4V，P溝道增強型垂直的DMOS結構場效應管）
文件頁數(shù)： 2/4頁
文件大小： 31K
代理商： TP2522
7-140
TP2520/TP2522
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
1.6W
θ
jc
°
C/W
15
θ
ja
°
C/W
78
I
DR
*
I
DRM
TO-243AA
-0.57A
-2.0A
-0.57A
-2.0A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Thermal Characteristics
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
TP2522
-220
V
V
GS
= 0V, I
D
= -2mA
TP2520
-200
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
-1.0
-2.4
V
V
GS
= V
DS
, I
D
= -1mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= -4.5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -100mA
V
GS
= -10V, I
D
= -200mA
V
GS
= -10V, I
D
= -200mA
V
DS
= -25V, I
D
= -200mA
Change in V
GS(th)
with Temperature
Gate Body Leakage
4.5
mV/
°
C
-100
nA
Zero Gate Voltage Drain Current
-10
μ
A
-1.0
mA
I
D(ON)
ON-State Drain Current
-0.25
-0.7
-0.75
-2.1
R
DS(ON)
10
15
8.0
12
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.7
%/
°
C
100
250
m
Input Capacitance
75
125
Common Source Output Capacitance
20
85
pF
Reverse Transfer Capacitance
10
35
Turn-ON Delay Time
10
Rise Time
15
Turn-OFF Delay Time
20
Fall Time
15
Diode Forward Voltage Drop
-1.8
V
V
GS
= 0V, I
SD
= -0.5A
V
GS
= 0V, I
SD
= -0.5A
Reverse Recovery Time
300
ns
Notes:
1.All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
A
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
ns
V
DD
= -25V,
I
D
= -0.75A,
R
GEN
= 25
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