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參數(shù)資料
| 型號(hào)： | TP2522N8-G |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-Channel Enhancement Mode Vertical DMOS FETs |
| 中文描述： | 0.26 A, 220 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 581K |
| 代理商： | TP2522N8-G |
TP2522
Features
Low threshold — -2.4V max.
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low ON-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
R
DS(ON)
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
P-Channel Enhancement Mode
Vertical DMOS FETs
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
300°C
* Distance of 1.6 mm from case for 10 seconds.
Absolute Maximum Ratings
Pin Configuration
Product Marking
TO-243AA (SOT-89) (N8)
TO-243AA (SOT-89) (N8)
W = Code for week sealed
TP5CW
GATE
SOURCE
DRAIN
DRAIN
BV
DSS
/BV
DGS
(V)
max
(Ω)
12
V
GS(th)
max
(V)
-2.4
I
D(ON)
min
(A)
-0.75
Package Options
TO-243AA (SOT-89)
Die*
-220
TP2522N8-G
TP2522ND
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
相關(guān)PDF資料 |
PDF描述 |
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| TP2535 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2535N3 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2540 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2540N3 | CABLE ASSEMBLY; SMB PLUG TO SMB JACK BULKHEAD; 50 OHM, RG188A/U COAX; |
| TP2540N8 | P-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP2522ND | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement Mode Vertical DMOS FETs |
| TP2535 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2535N3 | 功能描述:MOSFET 350V 25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2535N3-G | 功能描述:MOSFET 350V 25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2535N3-G P002 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
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