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參數(shù)資料
| 型號(hào)： | TP2435NW |
| 廠商： | SUPERTEX INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 496K |
| 代理商： | TP2435NW |
2
TP2435
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
GEPULSE
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
θ
jc
°
C/W
θ
ja
°
C/W
78
I
DR
*
I
DRM
@ T
A
= 25
°
C
1.6W
TO-243AA
-231mA
-1.1A
15
-231mA
-1.1A
* I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source
Breakdown Voltage
-350
V
V
GS
= 0V, I
D
= -250
μ
A
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
-1.0
-2.4
V
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= -4.5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -3.0V, I
D
= -20mA
V
GS
= -4.5V, I
D
= -150mA
V
GS
= -10V, I
D
= -500mA
V
GS
= -10V, I
D
= -150mA
V
DS
= -25V, I
D
= -350mA
Change in V
GS(th)
with Temperature
Gate Body Leakage
4.5
mV/
°
C
-100
nA
Zero Gate Voltage Drain Current
-10.0
μ
A
-1.0
mA
I
D(ON)
ON-State Drain Current
-0.3
-0.8
R
DS(ON)
15
15
15
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.7
%/
°
C
125
m
Input Capacitance
200
Common Source Output Capacitance
70
pF
Reverse Transfer Capacitance
25
Turn-ON Delay Time
15
Rise Time
20
Turn-OFF Delay Time
25
Fall Time
50
Diode Forward Voltage Drop
-1.5
V
V
GS
= 0V, I
SD
= -750mA
V
GS
= 0V, I
SD
= -750mA
Reverse Recovery Time
300
ns
Notes:
1.All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
A
ns
V
DD
= -25V,
I
D
= -250mA,
R
GEN
= 25
V
GS
= 0V, V
DS
= -25V
f = 1.0 MHz
Static Drain-to-Source
ON-State Resistance
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