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參數(shù)資料
| 型號(hào)： | TP2502 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-20V，低門(mén)限2.4V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| 中文描述： | P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管（擊穿電壓- 20V的，低門(mén)限為2.4V，P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | TP2502 |
7-131
7
Ordering Information
BV
DSS
/
BV
DGS
-20V
Preliminary
TP2502
Low Threshold
Order Number / Package
Features
Low threshold — -2.4V max.
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) power
transistors utilize a vertical DMOS structure and Supertex's well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive tem-
perature coefficient inherent in MOS devices. Characteristic of all
MOS structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Note: See Package Outline section for dimensions.
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
TO-243AA*
Die
2.0
-2.4V
-2.0A
TP2502N8
TP2502ND
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
TO-243AA
(SOT-89)
G
D
S
D
Product marking for TO-243AA
Where *=2-week alpha date code
TP5L*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TP2502 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2502N8 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2502ND | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2510N8-G | Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs |
| TP2510 | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-100V，低門(mén)限2.4V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP2502N8 | 功能描述:MOSFET 20V 2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2502N8-G | 功能描述:MOSFET 20V 2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2502ND | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2504N8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | TO-243AA |
| TP250A | 制造商:TOPSTEK 制造商全稱:TOPSTEK 功能描述:Topstek Current Transducers |
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