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參數(shù)資料
| 型號(hào)： | TN28F020-90 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| 中文描述： | 256K X 8 FLASH 12V PROM, 90 ns, PQCC32 |
| 封裝： | 0.450 X 0.550 INCH, PLASTIC, LCC-32 |
| 文件頁(yè)數(shù)： | 10/38頁(yè) |
| 文件大?。?/td> | 878K |
| 代理商： | TN28F020-90 |
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28F020
E
10
2.2.1.2
Output Disable
With OE# at a logic-high level (V
IH
), output from
the device is disabled. Output pins are placed in a
high-impedance state.
2.2.1.3
Standby
With CE# at a logic-high level, the standby
operation disables most of the 28F020’s circuitry
and
substantially
reduces
consumption. The outputs are placed in a high-
impedance state, independent of the OE# signal. If
the
28F020
is
deselected
programming, or program/erase verification, the
device draws active current until the operation is
terminated.
device
power
during
erasure,
2.2.1.4
Intelligent Identifier Operation
The intelligent identifier operation outputs the
manufacturer code (89H) and device code (BDH).
Programming equipment automatically matches
the device with its proper erase and programming
algorithms.
With CE# and OE# at a logic low level, raising A
9
to high voltage V
ID
(see
DC Characteristics
)
activates the operation. Data read from locations
0000H and 0001H represent the manufacturer’s
code and the device code, respectively.
The manufacturer and device codes can also be
read via the command register, for instances where
the 28F020 is erased and reprogrammed in the
target system. Following a write of 90H to the
command register, a read from address location
0000H outputs the manufacturer code (89H). A
read from address 0001H outputs the device code
(BDH).
2.2.1.5
Write
Device
accomplished via the command register, when high
voltage is applied to the V
PP
pin. The contents of
the register serve as input to the internal state
machine. The state machine outputs dictate the
function of the device.
erasure
and
programming
are
The command register itself does not occupy an
addressable memory location. The register is a
latch used to store the command, along with
address and data information needed to execute
the command.
The command register is written by bringing WE#
to a logic-low level (V
IL
), while CE# is low.
Addresses are latched on the falling edge of WE#
while data is latched on the rising edge of the WE#
pulse. Standard microprocessor write timings are
used.
Refer to
AC Characteristics
—Write/Erase/Program
Only Operations
and the erase/programming
waveforms for specific timing parameters.
2.2.2
COMMAND DEFINITIONS
When low voltage is applied to the V
PP
pin, the
contents of the command register default to 00H,
enabling read only operations.
Placing high voltage on the V
PP
pin enables
read/write operations. Device operations are
selected by writing specific data patterns into the
command register. Table 3 defines these 28F020
register commands.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN28F512-120 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intel 功能描述: |
| TN29/19/15-3E25 | 制造商:FERROXCUBE 功能描述:FERRITE CORE TOROID 3E25 制造商:FERROXCUBE 功能描述:FERRITE TN29/19/15-3E25 制造商:Yageo / Ferroxcube 功能描述:FERRITE CORE, TOROID, 3E25 制造商:FERROXCUBE 功能描述:FERRITE CORE, TOROID, 3E25; Core Type:Toroid; Core Size:TN29; Material Grade:3E25; Effective Magnetic Path Length:73.2mm; Ae Effective Cross Section Area:73.9mm2; Inductance Factor Al:7000nH; SVHC:No SVHC (18-Jun-2012); External ;RoHS Compliant: Yes |
| TN29/19/7.5 | 制造商:FERROXCUBE 制造商全稱:Ferroxcube International Holding B.V. 功能描述:Ferrite toroids |
| TN29/19/7.5-3C11 | 制造商:Yageo / Ferroxcube 功能描述: |
| TN29/19/7.5-3C90 | 制造商:FERROXCUBE 制造商全稱:Ferroxcube International Holding B.V. 功能描述:Ferrite toroids |
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