參數(shù)資料
型號: TN28F010-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 150 ns, PQCC32
封裝: 0.450 X 0.550 INCH, PLASTIC, LCC-32
文件頁數(shù): 24/33頁
文件大小: 895K
代理商: TN28F010-150
28F010
E
24
4.7
DC Characteristics
—CMOS Compatible—Extended Temperature Products
(Continued)
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
PP2
V
PP
Programming Current
1, 2
8.0
30
mA
V
PP
= V
PPH
Programming in Progress
I
PP3
V
PP
Erase Current
1, 2
6.0
30
mA
V
PP
= V
PPH
Erasure in Progress
I
PP4
V
PP
Program Verify
Current
1, 2
2.0
5.0
mA
V
PP
= V
PPH
Program Verify in Progress
I
PP5
V
PP
Erase Verify Current
1, 2
2.0
5.0
mA
V
PP
= V
PPH
Erase Verify in Progress
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7
V
CC
V
CC
+
0.5
V
V
OL
Output Low Voltage
0.45
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
V
OH1
Output High Voltage
0.85
V
CC
V
V
CC
= V
CC
Min
I
OH
= –2.5 mA
V
OH2
V
CC
– 0.4
V
CC
= V
CC
Min
I
OH
= –100 μA
V
ID
A
9
Intelligent Identifier
Voltage
11.50
13.00
V
I
ID
A
9
Intelligent Identifier
Current
1, 2
90
500
μA
A
9
= V
ID
V
PPL
V
PP
during Read-Only
Operations
0.00
6.5
V
NOTE:
Erase/Programs are
Inhibited when V
PP
= V
PPL
V
PPH
V
PP
during Read/Write
Operations
11.40
12.60
V
V
LKO
V
CC
Erase/Write Lock
Voltage
2.5
V
NOTE:
Refer to Section 4.4.
相關PDF資料
PDF描述
TN28F020-90 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F020-150 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F020-120 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F512-120 512K(64Kx8)CMOS FLASH MEMORY
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相關代理商/技術參數(shù)
參數(shù)描述
TN28F010-90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY
TN28F020-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F020-150 制造商:Intel 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC
TN28F020-90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F512-120 制造商:Rochester Electronics LLC 功能描述: 制造商:Intel 功能描述: