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參數(shù)資料
| 型號： | TMS6648148A |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 4 194 304 4位/ 2 097 152 8位/ 1 048 576由16位4，銀行同步動態(tài)隨機存取記憶體 |
| 文件頁數(shù)： | 9/56頁 |
| 文件大?。?/td> | 958K |
| 代理商： | TMS6648148A |
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TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
9
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
burst sequence
All data for the ’664xx4 is written or read in a burstfashion, that is, a single starting address is entered into the
device and then the ’664xx4 internally accesses a sequence of locations based on that starting address. Some
of the subsequent accesses after the first one can be at preceding, as well as succeeding, column addresses
depending on the starting address entered. This sequence can be programmed to follow either a serial burst
or an interleave burst (see Table 4 through Table 6). The length of the burst sequence can be user-programmed
to be 1, 2, 4, or 8. After a read burst is completed (as determined by the programmed burst length), the outputs
are in the high-impedance state until the next read access is initiated.
Table 4. 2-Bit Burst Sequences
INTERNAL COLUMN ADDRESS A0
DECIMAL
BINARY
START
0
2ND
1
START
0
2ND
1
Serial
1
0
1
0
Interleave
0
1
0
1
1
0
1
0
Table 5. 4-Bit Burst Sequences
INTERNAL COLUMN ADDRESS A1–A0
DECIMAL
2ND
1
BINARY
2ND
01
START
0
3RD
2
4TH
3
START
00
3RD
10
4TH
11
Serial
1
2
3
0
01
10
11
00
2
3
0
1
10
11
00
01
3
0
1
2
11
00
01
10
0
1
2
3
00
01
10
11
Interleave
1
0
3
2
01
00
11
10
2
3
0
1
10
11
00
01
3
2
1
0
11
10
01
00
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS6641648 | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS6641648A | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS66441410 | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS6644148 | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS6644148A | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| TMS664814DGE-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC |
| TMS664814DGE-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC |
| TMS664814DGE-8A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC |
| TMS6708-20DJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM |
| TMS6708-25DJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM |
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