參數(shù)資料
型號: TMS6648148A
廠商: Texas Instruments, Inc.
英文描述: 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
中文描述: 4 194 304 4位/ 2 097 152 8位/ 1 048 576由16位4,銀行同步動(dòng)態(tài)隨機(jī)存取記憶體
文件頁數(shù): 35/56頁
文件大小: 958K
代理商: TMS6648148A
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
35
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
CKE
CS
A0–A9
A10
A11
A12
A13
W
CAS
RAS
DQMx
DQ
CLK
C0
R0
R0
R0
h
g
f
e
d
c
b
a
DEAC_3
WRT_3
ACTV_3
nWR
tRCD
BURST
TYPE
BANK
ROW
BURST CYCLE
(D/Q)
(0–3)
ADDR
a
b
c
d
e
f
g
h
D
3
R0
C0
C0+1
C0+2
C0+3
C0+4
C0+5
C0+6
C0+7
Column-address sequence depends on programmed burst type and starting address C0 (see Table 6).
NOTE A: This example illustrates minimum tRCD and nWR for the ’664xx4 at 125 MHz.
Figure 26. Write Burst (burst length = 8)
相關(guān)PDF資料
PDF描述
TMS6641648 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS6641648A 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS66441410 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS6644148 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS6644148A 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
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