參數(shù)資料
型號: TMS6648148
廠商: Texas Instruments, Inc.
英文描述: 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
中文描述: 4 194 304 4位/ 2 097 152 8位/ 1 048 576由16位4,銀行同步動態(tài)隨機(jī)存取記憶體
文件頁數(shù): 37/56頁
文件大小: 958K
代理商: TMS6648148
T
4
S
S
P
3
BURST
TYPE
BANK
ROW
BURST CYCLE
(D/Q)
(0–3)
ADDR
a
b
c
d
e
f
g
h
i
j
k
l
m
n
o
p
Q
2
R0
C0
C0+1
C0+2
C0+3
C0+4
C0+5
C0+6
C0+7
D
2
R0
C1
C1+1
C1+2
C1+3
C1+4
C1+5
C1+6
C1+7
Column-address sequence depends on programmed burst type and starting address C0 (see Table 6).
NOTE A: This example illustrates minimum tRCD for the ’664xx4 at 125 MHz.
Figure 28. Read-Write Burst With Automatic Deactivate (CAS latency = 3, burst length = 8)
P
R0
A11
CKE
CS
A0–A9
A10
A12
A13
W
CAS
RAS
DQMx
DQ
CLK
C1
C0
R0
R0
p
o
n
m
l
k
j
i
h
g
f
e
d
c
b
a
WRT-P_2
READ_2
ACTV_2
tRCD
相關(guān)PDF資料
PDF描述
TMS6648148A 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS6641648 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS6641648A 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS66441410 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS6644148 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TMS6648148A 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS664814DGE-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC
TMS664814DGE-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC
TMS664814DGE-8A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC
TMS6708-20DJ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM