參數資料
型號: TMS6644148A
廠商: Texas Instruments, Inc.
英文描述: 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
中文描述: 4 194 304 4位/ 2 097 152 8位/ 1 048 576由16位4,銀行同步動態(tài)隨機存取記憶體
文件頁數: 41/56頁
文件大小: 958K
代理商: TMS6644148A
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
41
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
CKE
CS
A0–A9
A10
A11
A12
A13
CAS
RAS
DQMx
DQ
CLK
C1
C0
R1
R1
R1
R0
R0
R0
h
g
f
e
d
c
b
a
DEAC_2
WRT_2
DEAC_0
ACTV_2
READ_0
ACTV_0
W
tRCD
BURST
TYPE
BANK
ROW
BURST CYCLE
(D/Q)
(0–3)
ADDR
a
b
c
d
e
f
g
h
Q
0
R0
C0
C0+1
C0+2
C0+3
D
2
R1
C1
C1+1
C1+2
C1+3
Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).
NOTE A: This example illustrates minimum tRCD for the ’664xx4 at 125 MHz.
Figure 31. Read-Burst Bank 0, Write-Burst Bank 1 (CAS latency = 3, burst length = 4)
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