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參數(shù)資料
| 型號： | TMS6641648 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 4 194 304 4位/ 2 097 152 8位/ 1 048 576由16位4，銀行同步動態(tài)隨機(jī)存取記憶體 |
| 文件頁數(shù)： | 52/56頁 |
| 文件大?。?/td> | 958K |
| 代理商： | TMS6641648 |
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TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A– APRIL 1998 – REVISED JULY 1998
52
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
CKE
CS
A0–A9
A10
A11
A12
A13
W
CAS
RAS
DQMx
DQ
CLK
R0
R0
R0
C0
C1
R1
R1
R1
R1
R0
See Note A
h
g
f
e
d
c
b
a
WRT-P_0
ACTV_0
HOLD
READ-P_1
ACTV_1
tRCD
BURST
TYPE
BANK
(0–1)
ROW
BURST CYCLE
(D/Q)
ADDR
a
b
c
d
e
f
g
h
Q
1
R0
C0
C0 + 1
C0 + 2
C0 + 3
D
0
R1
C1
C1 + 1
C1 + 2
C1 + 3
Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).
NOTES: A. These rising clocks during output “c” with DQMx = Hi do not mask out the output “d” due to CKE inserted low to suspend
those rising clocks at cycle DQMx = Hi.
B. This example illustrates minimum tRCD for the ’664xx4 at 100 MHz.
Figure 42. Use of CKE for Clock Gating (Hold/Suspend) and DQM = Hi Showed No Effect
(CAS latency = 2, burst length = 4, two banks)
相關(guān)PDF資料 |
PDF描述 |
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| TMS6641648A | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS66441410 | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS6644148 | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS6644148A | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS99534A | FREQUENCY-SHITF-KEYED MODEM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS6641648A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS664164DGE-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X1MX16|CMOS|TSOP|54PIN|PLASTIC |
| TMS664164DGE-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X1MX16|CMOS|TSOP|54PIN|PLASTIC |
| TMS664164DGE-8A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X1MX16|CMOS|TSOP|54PIN|PLASTIC |
| TMS664414 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
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