參數(shù)資料
型號: TMS28F004AMB70BDBJL
廠商: Texas Instruments, Inc.
英文描述: 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
中文描述: 524288按8-BIT/262144由16位自動選擇啟動塊閃存
文件頁數(shù): 44/80頁
文件大小: 1080K
代理商: TMS28F004AMB70BDBJL
TMS28F004Axy, TMS28F400Axy
524288 BY 8-BIT/
262
144 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS829A – JANUARY 1996 – REVISED AUGUST 1997
44
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
TMS28F004AMy and TMS28F400AMy
The TMS28F004AMy and the TMS28F400AMy configurations offer a 3-V or 5-V memory read with a 12-V
program and erase. This configuration is intended for low 3.3-V reads and the fast programming offered with
the 12-V V
PP
= 12 V and 5-V V
CC
. This configuration is offered in two different temperature ranges: 0
°
C to 70
°
C
and – 40
°
C to 85
°
C.
recommended operating conditions for TMS28F004AMy and TMS28F400AMy
MIN
NOM
3.3
MAX
3.6
UNIT
VCC
Supply voltage
During write/read/erase/erase suspend
3.3-V VCC range
5-V VCC range
VPPL
12-V VPP range
TTL
3
V
4.5
5
5.5
VPP
Supply voltage
During read only (VPPL)
During write/erase/erase suspend
0
6.5
V
11.4
12
12.6
3 3 V VCCrange
3.3 V VCC range
2
VCC + 0.5
VCC + 0.2
VCC + 0.3
VCC + 0.2
0.8
VIH
High-level dc
input voltage
CMOS
VCC – 0.2
V
5 V VCCrange
5 V VCC range
TTL
2
CMOS
VCC – 0.2
– 0.5
3 3 V VCCrange
3.3 V VCC range
TTL
VIL
Low-level dc input
voltage
CMOS
VSS – 0.2
– 0.3
VSS + 0.2
0.8
V
5 V VCCrange
5 V VCC range
TTL
CMOS
VSS – 0.2
VSS + 0.2
VLKO
VHH
VPPLK
VCC lock-out voltage from write/erase (see Note 7)
RP unlock voltage
2
V
11.4
12
13
V
VPP lock-out voltage from write/erase
0
1.5
V
TA
Operating free air temperature
Operating free-air temperature
L Suffix
E Suffix
0
70
85
°
C
– 40
NOTE 7: Mimimum value at TA = 25
°
C.
word/byte typical write and block-erase performance for TMS28F004AMy and TMS28F400AMy
(see Notes 8 and 9)
12-V VPP RANGE
3.3-V VCC
RANGE
PARAMETER
5-V VCC RANGE
MIN
TYP
MAX
MIN
TYP
MAX
Main block-erase time
1.3
1.1
14
Main block-byte program time
1.6
1.2
4.2
Main block-word program time
0.8
0.6
2.1
Parameter/boot-block erase time
8. Typical values shown are at TA = 25
°
C and nominal conditions.
9. Excludes system-level overhead (all times in seconds)
0.44
0.34
7
NOTES:
相關(guān)PDF資料
PDF描述
TMS28F004AMB70CDBJL 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
TMS320AV110 MPEG Audio Decoder(MPEG音頻譯碼器)
TMS320AV120 MPEG Audio Decoder(MPEG音頻譯碼器)
TMS320AV220 Video CD MPEG Decoder(視頻CD MPEG編碼器)
TMS320AV410 Digital NTSC/PAL Encoder(數(shù)字NTSC/PAL編碼器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TMS28F004AMB70BDCDE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
TMS28F004AMB70BDCDL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
TMS28F004AMB70CDBJL 制造商:TI 制造商全稱:Texas Instruments 功能描述:524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
TMS28F004AMB70CDCDE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
TMS28F004AMB70CDCDL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM